MC908GR16VFAE Freescale Semiconductor, MC908GR16VFAE Datasheet - Page 39

• Manufacturer Part Number: MC908GR16VFAE
• Description: IC MCU 16K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR16VFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 4
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Programming tools are available from Freescale Semiconductor. Contact your local representative for
more information.
2.6.1.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
Freescale Semiconductor
unauthorized users.
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = PAGE erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
A security feature prevents viewing of the FLASH contents.
Reset:
Read:
Write:
$FE08
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908GR16 Data Sheet, Rev. 5.0
5
0
0
NOTE
4
0
0
HVEN
3
0
MASS
2
0
(1)
ERASE
1
0
FLASH Memory (FLASH)
PGM
Bit 0
0
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