K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 32

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
DQS
Note1
V
V
V
V
NOTE : DQS signal must be monotonic between V
V
V
IL
IL
DDQ
REF
IH
IH
(DC)max
(AC)max
Hold Slew Rate
(AC)min
(DC)min
Rising Signal
(DC)
V
V
V
V
V
V
V
Figure 12. IIIustration of nominal slew rate for tDH (single-ended DQS)
DDQ
IH
IH
REF
IL
IL
SS
V
(DC)max
(AC)max
(AC)min
(DC)min
SS
(DC)
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
datasheet
∆TR
slew rate
nominal
tDS
IL
(DC)max
tDH
IL
(DC)max and V
- 32 -
∆TR
Hold Slew Rate
Falling Signal
IH
(DC)min.
tDS
nominal
slew rate
=
V
IH
(DC)min - V
tDH
∆TF
∆TF
REF
(DC)
DDR2 SDRAM
Rev. 1.11