K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 35

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
9. tIS and tIH (input setup and hold) derating
[ Table 4 ]
Address Slew
Command/
rate(V/ns)
Derating values for DDR2-400, DDR2-533
0.25
0.15
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-1450
+187
+179
+167
+150
+125
-110
-175
-285
-350
-525
-800
∆tIS
+83
-11
-25
-43
-67
0
2.0 V/ns
∆tIS, ∆tIH Derating Values for DDR2-400, DDR2-533
-1125
-125
-188
-292
-375
-500
-708
∆tIH
+94
+89
+83
+75
+45
+21
-14
-31
-54
-83
0
datasheet
-1420
+217
+209
+197
+180
+155
+113
-145
-255
-320
-495
-770
∆tIS
+30
+19
-13
-37
-80
+5
1.5 V/ns
CK, CK Differential Slew Rate
- 35 -
-1095
+124
+119
+113
+105
-158
-262
-345
-470
-678
∆tIH
+75
+51
+30
+16
-24
-53
-95
-1
-1390
+247
+239
+227
+210
+185
+143
-115
-225
-290
-465
-740
∆tIS
+60
+49
+35
+17
-50
-7
1.0 V/ns
-1065
+154
+149
+143
+135
+105
∆tIH
-128
-232
-315
-440
-648
+81
+60
+46
+29
-23
-65
+6
DDR2 SDRAM
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Rev. 1.11
NOTE
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