BF1205C NXP Semiconductors, BF1205C Datasheet - Page 10

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 16. Output admittance as a function of frequency; typical values.
V
DS(a)
= 5 V; V
8.1.2 Scattering parameters for amplifier a
8.1.3 Noise data for amplifier a
G2-S(a)
Table 9.
V
Table 10.
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
f
(MHz)
400
800
DS(a)
DS(a)
= 4 V; V
= 5 V; V
= 5 V; V
S
Magnitude
ratio
0.992
0.990
0.982
0.971
0.956
0.938
0.917
0.893
0.867
0.838
0.807
b
DS(b)
os
11
(mS)
Scattering parameters for amplifier a
Noise data for amplifier a
10
10
, g
10
os
G2-S
G2-S
1
= V
1
2
10
G1-S(b)
= 4 V; I
= 4 V; I
F
(dB)
1.3
1.4
min
Angle
(deg)
= 0 V; I
3.91
7.76
15.42 3.04
22.99 3.01
30.52 2.96
37.83 2.90
45.14 2.83
52.31 2.76
59.47 2.69
66.23 2.60
73.10 2.52
Rev. 02 — 15 August 2006
D(a)
D(a)
D(a)
= 19 mA; V
= 19 mA; V
S
Magnitude
ratio
3.07
3.06
21
= 19 mA.
10
2
ratio
0.718
0.677
DS(b)
DS(b)
opt
b
g
f (MHz)
os
os
Angle
(deg)
175.56 0.0007
171.18 0.0017
162.42 0.0026
153.79 0.0037
145.22 0.0047
136.78 0.0055
128.46 0.0061
120.20 0.0065
111.98 0.0068
103.90 0.0067
95.875 0.0065
= 0 V; V
= 0 V; V
001aaa567
G-1S(b)
S
Magnitude
ratio
G-1S(b)
10
12
Dual N-channel dual gate MOS-FET
3
(deg)
16.06
37.59
= 0 V; T
= 0 V; T
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Angle
(deg)
83.61
83.19
78.19
73.75
69.82
66.12
62.11
58.86
58.28
50.64
47.28
amb
amb
= 25 C.
= 25 C.
S
Magnitude
ratio
0.992
0.992
0.990
0.988
0.985
0.982
0.979
0.975
0.972
0.968
0.966
BF1205C
22
r
( )
0.683
0.681
n
Angle
(deg)
10 of 22
1.47
2.93
5.84
8.71
11.59
14.48
17.31
20.14
22.98
25.85
28.74