BF1205C NXP Semiconductors, BF1205C Datasheet - Page 7

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 6. Forward transfer admittance as a function of
(mS)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
y
fs
40
30
20
10
0
V
drain current; typical values.
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(a)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 5 V; V
8
(6)
G1-S(b)
= V
16
(5)
DS(b)
= 0 V; T
(4)
24
j
I
001aaa556
D
= 25 C.
(1)
(mA)
(2)
(3)
Rev. 02 — 15 August 2006
32
Fig 7. Drain current as a function of internal G1
I
(mA)
D
(a)
20
16
12
8
4
0
V
V
current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.
0
DS(a)
G1-S(b)
= 5 V; V
= 0 V; T
Dual N-channel dual gate MOS-FET
G2-S
20
j
= 25 C.
= 4 V; V
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
DS(b)
40
= 5 V;
I
BF1205C
D
(b) ( A)
001aaa557
60
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