BF1205C NXP Semiconductors, BF1205C Datasheet - Page 3

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BF1205C

Manufacturer Part Number
BF1205C
Description
Dual N-channel Dual Gate Mos-fet
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
BF1205C_2
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Type number
BF1205C
Type number
BF1205C
Symbol
Per MOS-FET
V
I
I
I
P
T
T
Symbol
R
D
G1
G2
stg
j
DS
tot
th(j-s)
* = p or -: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Parameter
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
Package
Name
-
Rev. 02 — 15 August 2006
Description
plastic surface mounted package; 6 leads
Conditions
T
sp
Conditions
Marking code
M6*
107 C
Dual N-channel dual gate MOS-FET
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
-
-
65
Typ
240
Max
6
30
180
+150
150
BF1205C
10
10
Unit
K/W
Unit
V
mA
mA
mA
mW
C
C
Version
SOT363
3 of 22

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