BF1205C NXP Semiconductors, BF1205C Datasheet - Page 11

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 11.
Common source; T
[1]
[2]
BF1205C_2
Product data sheet
Symbol
C
C
C
C
G
NF
X
y
mod
ig1-ss
ig2-ss
oss
rss
tr
fs
For the MOS-FET not in use: V
Measured in
Parameter
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
power gain
noise figure
cross-modulation
Dynamic characteristics for amplifier b
Figure 34
8.2 Dynamic characteristics for amplifier b
amb
= 25 C; V
test circuit.
G1-S(a)
G2-S
= 4 V; V
= 0 V; V
Conditions
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1 %; f
j
S
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
= 25 C
= B
DS(a)
DS
S(opt)
= 5 V; I
= 0 V.
Rev. 02 — 15 August 2006
; B
S
L
D
S
S
= B
= 20 mS; B
= Y
= Y
= 13 mA.
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
w
= 50 MHz; f
S
= 0 S
L
L
= 0.5 mS
= 1 mS
L
= 1 mS
unw
= 60 MHz
Dual N-channel dual gate MOS-FET
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[2]
Min Typ
28
-
-
-
-
31
28
24
-
-
-
90
-
-
100
BF1205C
33
2.0
3.4
0.85
20
35
32
28
5
1.3
1.4
-
88
94
103
Max Unit
43
2.5
-
-
-
39
36
32
-
1.9
2.1
-
-
-
-
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dB V
dB V
dB V
dB V
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