BF1205C NXP Semiconductors, BF1205C Datasheet - Page 4

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Static characteristics
Table 7.
T
[1]
[2]
BF1205C_2
Product data sheet
Symbol
Per MOS-FET; unless otherwise specified
V
V
V
V
V
V
V
I
I
I
DSX
G1-S
G2-S
j
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
= 25 C.
R
R
G1
G1
connects gate 1 (b) to V
connects gate 1 (b) to V
Static characteristics
Parameter
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
Fig 1. Power derating curve.
GG
GG
= 0 V (see
= 5 V (see
Figure
Figure
(mW)
3).
3).
P
Rev. 02 — 15 August 2006
tot
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
250
200
150
100
50
G1-S
GS
GS
G2-S
G1-S
DS
DS
G2-S
G2-S
G2-S
G1-S(a)
G1-S(b)
0
amplifier a
amplifier b
amplifier a; V
amplifier b
amplifier a; V
amplifier b; V
0
= V
= V
= 5 V; V
= 5 V; V
= V
= V
= V
= 4 V; V
= V
= 4 V;
DS
DS
= V
= 0 V;
G2-S
DS
DS
DS(a)
= 0 V; I
= 0 V; I
DS(a)
= 0 V; I
= 0 V; I
G2-S
G1-S
50
= 0 V; I
DS(b)
= 0 V
DS(a)
G1-S(a)
G1-S(b)
= V
= 4 V; I
= 5 V; I
G1-S
G2-S
= 5 V; R
S-G1
S-G2
DS(b)
= 5 V
D
= 5 V; I
= 5 V; V
100
= 10 mA
= 10 mA
= 10 A
D
D
= 10 mA
= 10 mA
= 0 V;
= 100 A
= 100 A
G1
D(b)
DS(b)
= 150 k
Dual N-channel dual gate MOS-FET
150
= 0 A
= 0 V
T
001aac193
sp
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(˚C)
200
[1]
[2]
Min
6
6
6
6
0.5
0.5
0.3
0.4
14
9
-
-
-
BF1205C
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max Unit
-
-
10
10
1.5
1.5
1.0
1.0
24
17
50
50
20
4 of 22
V
V
V
V
V
V
V
V
mA
mA
nA
nA
nA