BF1205C NXP Semiconductors, BF1205C Datasheet - Page 9

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 12. Drain current as a function of gain reduction;
Fig 14. Forward transfer admittance and phase as a
(mA)
(mS)
y
I
D
fs
10
32
24
16
10
8
0
1
2
V
T
typical values.
V
I
function of frequency; typical values.
10
D(a)
0
amb
DS(a)
DS(a)
= 19 mA.
= 25 C; see
= V
= 5 V; V
DS(b)
G2-S(a)
= 5 V; V
20
Figure
= 4 V; V
10
G1-S(b)
2
33.
y
fs
fs
DS(b)
= 0 V; f = 50 MHz;
40
gain reduction (dB)
f (MHz)
= V
G1-S(b)
001aaa562
001aaa565
= 0 V;
10
Rev. 02 — 15 August 2006
60
3
10
10
1
(deg)
2
fs
Fig 13. Input admittance as a function of frequency;
Fig 15. Reverse transfer admittance and phase as a
b
(mS)
(mS)
is
y
10
10
, g
rs
10
10
10
10
10
is
1
1
2
1
2
3
2
V
I
typical values.
V
I
function of frequency: typical values.
10
10
D(a)
D(a)
DS(a)
DS(a)
= 19 mA.
= 19 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOS-FET
G2-S(a)
G2-S(a)
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
= 4 V; V
= 4 V; V
10
10
2
2
b
g
y
is
is
rs
rs
DS(b)
DS(b)
f (MHz)
f (MHz)
= V
= V
BF1205C
G1-S(b)
G1-S(b)
001aaa564
001aaa566
= 0 V;
= 0 V;
10
10
3
3
10
10
10
1
(deg)
3
2
rs
9 of 22