BF1205C NXP Semiconductors, BF1205C Datasheet - Page 2

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2. Pinning information
BF1205C_2
Product data sheet
1.4 Quick reference data
Table 1.
Per MOS-FET unless otherwise specified.
[1]
Table 2.
Symbol Parameter
V
I
P
C
C
NF
X
T
Pin
1
2
3
4
5
6
D
y
j
DS
tot
mod
ig1-ss
rss
fs
T
sp
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
junction temperature
Quick reference data
Discrete pinning
Description
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)
Rev. 02 — 15 August 2006
Conditions
T
f = 1 MHz
f = 1 MHz
amplifier a; f = 400 MHz
amplifier b; f = 800 MHz
input level for k = 1 % at
40 dB AGC
sp
amplifier a; I
amplifier b; I
amplifier a
amplifier b
amplifier a
amplifier b
107 C
Simplified outline
D
D
= 19 mA
= 13 mA
Dual N-channel dual gate MOS-FET
6
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5
2
001aaa706
[1]
4
3
Min Typ
-
-
-
26
28
-
-
-
-
-
100
100
-
Symbol
BF1205C
(a)
(b)
g1
g2
g1
-
-
-
31
33
2.2
2.0
20
1.3
1.4
105
103
-
AMP b
AMP a
Max Unit
6
30
180
41
43
2.7
2.5
-
1.9
2.1
-
-
150
sym033
V
mA
mW
mS
mS
pF
pF
fF
dB
dB
dB V
dB V
2 of 22
C
(a)
(b)
d
d
s