BF1205C NXP Semiconductors, BF1205C Datasheet - Page 15

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 25. Gate 1 current as a function of gate 2 voltage;
Fig 27. Typical gain reduction as a function of AGC
reduction
gain
(dB)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
I
G1
30
20
10
10
20
30
40
50
0
0
V
R
typical values.
V
R
T
voltage.
0
0
amb
GG
GG
GG
GG
GG
DS(b)
DS(b)
G1(b)
G1(b)
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 25 C; see
= 5 V; V
= 150 k (connected to V
= 5 V; V
= 150 k (connected to V
1
DS(a)
GG
2
= 5 V; V
Figure
= V
G1-S(a)
2
34.
DS(a)
= 0 V; T
= V
4
GG
GG
G1-S(a)
); see
); f = 50 MHz;
3
V
G2-S
V
j
001aaa576
001aaa578
AGC
= 25 C;
(1)
(2)
(3)
(4)
(5)
(V)
= 0 V;
Figure
(V)
Rev. 02 — 15 August 2006
6
4
3.
Fig 26. Unwanted voltage for 1 % cross-modulation as
Fig 28. Drain current as a function of gain reduction;
(dB V)
V
(mA)
unw
I
D
120
110
100
90
80
16
12
8
4
0
V
R
f
a function of gain reduction; typical values.
V
R
T
typical values.
unw
0
0
amb
DS(b)
G1(b)
DS(b)
G1(b)
= 60 MHz; T
= 25 C; see
= 5 V; V
= 150 k (connected to V
= 5 V; V
= 150 k (connected to V
Dual N-channel dual gate MOS-FET
GG
GG
20
20
amb
= 5 V; V
= 5 V; V
Figure
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
= 25 C; see
34.
DS(a)
DS(a)
40
40
gain reduction (dB)
= V
gain reduction (dB)
= V
GG
GG
Figure
G1-S(a)
G1-S(a)
); f
); f = 50 MHz;
BF1205C
w
001aaa577
001aaa579
= 50 MHz;
34.
= 0 V;
= 0 V;
60
60
15 of 22