BF1205C NXP Semiconductors, BF1205C Datasheet - Page 5

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
BF1205C_2
Product data sheet
Symbol
C
C
C
C
G
NF
Fig 2. Drain currents of MOS-FET a and b as function
y
ig1-ss
ig2-ss
oss
rss
tr
fs
(mA)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
I
D
20
16
12
8
4
0
of V
D(b)
D(b)
D(b)
D(a)
D(a)
D(a)
0
Parameter
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
noise figure
Dynamic characteristics for amplifier a
; R
; R
; R
; R
; R
; R
GG
G1
G1
G1
G1
G1
G1
(6)
.
= 120 k .
= 150 k .
= 180 k .
= 180 k .
= 150 k .
= 120 k .
8.1 Dynamic characteristics for amplifier a
1
amb
(4)
= 25 C; V
(5)
2
G2-S
3
= 4 V; V
Conditions
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
4
001aaa552
j
S
(2)
V
(1)
(3)
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
= 25 C
GG
= B
DS
(V)
= 5 V; I
S(opt)
Rev. 02 — 15 August 2006
5
[1]
; B
D
L
S
S
S
= 19 mA.
= B
= 20 mS; B
= Y
= Y
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
Fig 3. Functional diagram.
S
= 0 S
V
V
L
L
GG
GG
= 0.5 mS
= 1 mS
L
= 1 mS
= 5 V: amplifier a is off; amplifier b is on
= 0 V: amplifier a is on; amplifier b is off.
g1 (a)
g1 (b)
g2
R
G1
Dual N-channel dual gate MOS-FET
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
V
GG
Min
26
-
-
-
-
31
26
21
-
-
-
001aaa553
BF1205C
Typ Max Unit
31
2.2
3.0
0.9
20
35
30
25
3.0
1.3
1.4
d (a)
s
d (b)
41
2.7
-
-
-
39
34
29
-
1.9
2.1
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
5 of 22