BF1205C NXP Semiconductors, BF1205C Datasheet - Page 13

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 19. Gate 1 current as a function of gate 1 voltage;
Fig 21. Drain current as a function of gate 1 current;
(mA)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
G1
I
D
100
80
60
40
20
24
16
0
8
0
V
typical values.
V
T
typical values.
0
0
j
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(b)
DS(b)
= 25 C.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
= 5 V; V
0.4
10
DS(a)
G2-S
0.8
20
= 4 V; V
= V
G1-S(a)
DS(a)
1.2
30
= 0 V; T
= V
G1-S(a)
1.6
40
j
V
(1)
001aaa570
001aaa572
= 25 C.
I
G1
G1-S
( A)
= 0 V;
(2)
(3)
(4)
(5)
(6)
(7)
(V)
Rev. 02 — 15 August 2006
50
2
Fig 20. Forward transfer admittance as a function of
Fig 22. Drain current as a function of gate 1 supply
(mS)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
y
I
D
fs
40
30
20
10
16
12
0
8
4
0
V
drain current; typical values.
V
T
Figure
voltage (V
0
0
j
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(b)
DS(b)
= 25 C; R
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
= 5 V; V
3.
1
Dual N-channel dual gate MOS-FET
GG
8
G1(b)
DS(a)
G2-S
); typical values.
(6)
= 150 k (connected to V
2
= 4 V; V
= V
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
G1-S(a)
16
DS(a)
(5)
3
= 0 V; T
= V
24
BF1205C
G1-S(a)
(4)
4
j
I
001aaa571
D
001aaa573
(3)
= 25 C.
V
GG
(mA)
(1)
(2)
= 0 V;
(V)
GG
32
); see
5
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