BF1205C NXP Semiconductors, BF1205C Datasheet - Page 17

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
8.2.2 Scattering parameters for amplifier b
8.2.3 Noise data for amplifier b
Table 12.
V
Table 13.
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
f
(MHz)
400
800
DS(b)
DS(b)
= 5 V; V
= 5 V; V
S
Magnitude
ratio
0.986
0.982
0.975
0.966
0.955
0.943
0.927
0.909
0.891
0.868
0.846
11
Scattering parameters for amplifier b
Noise data for amplifier b
G2-S
G2-S
= 4 V; I
= 4 V; I
F
(dB)
1.3
1.4
min
Angle
(deg)
3.66
7.01
13.71 3.22
20.36 3.19
27.04 3.15
33.62 3.10
40.16 3.05
46.70 2.99
52.07 2.92
59.48 2.84
65.86 2.77
Rev. 02 — 15 August 2006
D(b)
D(b)
= 13 mA; V
= 13 mA; V
S
Magnitude
ratio
3.26
3.24
21
ratio
0.695
0.674
DS(a)
DS(a)
opt
Angle
(deg)
175.93 0.0008
172.04 0.0015
164.24 0.0029
156.53 0.0042
148.86 0.0055
141.24 0.0066
133.70 0.0076
126.13 0.0086
118.64 0.0094
111.09 0.0100
103.58 0.0107
= 0 V; V
= 0 V; V
S
Magnitude
ratio
G1-S(a)
G1-S(a)
12
Dual N-channel dual gate MOS-FET
(deg)
13.11
32.77
= 0 V; T
= 0 V; T
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Angle
(deg)
84.23
84.91
83.96
82.86
81.88
80.92
80.15
79.68
78.28
78.28
78.15
amb
amb
= 25 C.
= 25 C.
S
Magnitude
ratio
0.988
0.988
0.986
0.984
0.982
0.978
0.975
0.972
0.968
0.965
0.961
BF1205C
22
r
( )
0.694
0.674
n
Angle
(deg)
17 of 22
1.65
3.27
6.50
9.69
12.88
16.07
19.21
22.35
25.52
28.65
31.85