BF1205C NXP Semiconductors, BF1205C Datasheet - Page 8

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
BF1205C_2
Product data sheet
Fig 8. Drain current of amplifier a as a function of
Fig 10. Unwanted voltage for 1 % cross-modulation as
(dB V)
(mA)
V
I
unw
D
120
110
100
20
16
12
90
80
8
4
0
V
R
Figure
supply voltage of a and b amplifier; typical
values.
V
f
a function of gain reduction; typical values.
unw
0
0
DS(a)
DS(a)
G1(b)
= 60 MHz; T
= V
= 150 k (connected to ground); see
= V
3.
10
DS(b)
DS(b)
1
= V
= 5 V; V
amb
supply
20
2
= 25 C; see
G1-S(b)
, V
G2-S
30
3
gain reduction (dB)
= 0 V; f
= 4 V, T
Figure
40
w
4
V
001aaa558
001aaa560
j
= 50 MHz;
supply
= 25 C,
33.
(V)
Rev. 02 — 15 August 2006
50
5
Fig 9. Drain current as a function of gate 2 and drain
Fig 11. Gain reduction as a function of AGC voltage;
reduction
gain
(dB)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
I
D
32
24
16
10
20
30
40
50
8
0
0
V
T
supply voltage; typical values.
V
Figure
typical values.
0
0
j
DS(b)
DS(b)
DS(b)
DS(b)
DS(b)
DS(b)
DS(a)
DS(a)
= 25 C.
= 5 V.
= 4.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 5 V; V
= V
33.
DS(b)
Dual N-channel dual gate MOS-FET
1
G1-S(b)
= 5 V; V
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
= 0 V; gate 1 (a) = open;
G1-S(b)
2
= 0 V; f = 50 MHz; see
4
3
BF1205C
V
G2-S
V
001aaa559
001aaa561
AGC
(1)
(2)
(3)
(4)
(5)
(6)
(V)
(V)
6
4
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