BF1205C NXP Semiconductors, BF1205C Datasheet - Page 6

• Manufacturer Part Number: BF1205C
• Description: Dual N-channel Dual Gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 8.
Common source; T
[1]
[2]
BF1205C_2
Product data sheet
Symbol
X
Fig 4. Transfer characteristics; typical values.
mod
For the MOS-FET not in use: V
Measured in
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
30
20
10
0
V
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(a)
Parameter
cross-modulation
Dynamic characteristics for amplifier a
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
Figure 33
8.1.1 Graphs for amplifier a
0.4
amb
G1-S(b)
= 25 C; V
test circuit.
0.8
= V
DS(b)
G1-S(b)
G2-S
1.2
= 0 V; T
= 4 V; V
= 0 V; V
(2)
(3)
1.6
Conditions
input level for k = 1 %; f
j
V
001aaa554
= 25 C.
G1-S
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
(1)
DS(b)
DS
(4)
(5)
(6)
(7)
(V)
= 5 V; I
= 0 V.
Rev. 02 — 15 August 2006
2
[1]
…continued
D
= 19 mA.
Fig 5. Output characteristics; typical values.
w
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
(8) V
(9) V
= 50 MHz; f
I
D
32
24
16
8
0
V
0
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G1-S(a)
G2-S
= 4 V; V
= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1 V.
unw
Dual N-channel dual gate MOS-FET
= 60 MHz
G1-S(b)
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
= V
DS(b)
[2]
= 0 V; T
Min
90
-
-
100
4
BF1205C
V
Typ Max Unit
-
90
99
105 -
DS
j
= 25 C.
001aaa555
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
-
-
-
6
dB V
dB V
dB V
dB V
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