MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 19

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

Figure 12:
Figure 13:
Figure 14:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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Minimum Rp
READY/BUSY# Open Drain
t
Fall and
Notes: 1.
t
Rise
Rp (MIN, 1.8V part) =
Rp (MIN, 3.3V part) =
2.
3.
V
GND
V
CC
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
t
Fall and
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 10ns at 3.3V;
-1
I
Where
OL
t
Rise calculated at 10 percent and 90 percent points.
of all devices tied to the R/B# pin.
Device
0
ΣI
L
is the sum of the input currents
V
V
CC
CC
R/B#
Open drain output
2
(MAX) – V
(MAX) – V
t
Fall ≈ 7ns at 1.8V.
t
Fall
Rp
I
I
OL
OL
4
+ ΣI
+ ΣI
19
t
Rise
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
OL
OL
L
L
TC
(MAX)
(MAX)
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
=
=
2
3mA + ΣI
8mA + ΣI
1.85V
3.2V
4
L
L
Vcc 3.3
Vcc 1.8
6
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