MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 7

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

General Description
Figure 3:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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NAND Flash Functional Block Diagram
Note:
NAND Flash technology provides a cost-effective solution for applications requiring
high-density solid-state storage. Micron MT29F2G08AxC and MT29F2G16AxC devices
are 2Gb NAND Flash memory devices. The MT29F4G08BxC and MT29F4G16BxC are
4Gb devices. The MT29F8G08FAC is a four-die stack that operates as two independent
4Gb devices, providing a total storage capacity of 8Gb in a single, space-saving package.
These devices include standard NAND features as well as new features designed to
enhance system-level performance.
Micron NAND Flash devices use a highly multiplexed 8- or 16-bit bus (I/O[7:0] or
I/O[15:0]) to transfer data, addresses, and instructions. The five command pins (CLE,
ALE, CE#, RE#, WE#) implement the NAND command bus interface protocol. Three
additional pins control hardware write protection (WP#), monitor device status (R/B#),
and initiate the power-on AUTO-READ (PRE) feature. The PRE function is available on
3V commercial-temperature devices only.
This hardware interface creates a low-pin-count device with a standard pinout that is
the same from one density to another, supporting future upgrades to higher densities
without board redesign.
The MT29F2G and MT29F4G devices contain 2,048 and 4,096 erasable blocks respec-
tively. Each block is subdivided into 64 programmable pages. Each page consists of
2,112 bytes (x8) or 1,056 words (x16). The pages are further divided into a 2,048-byte data
storage region with a separate 64-byte area on the x8 device; and on the x16 device, sep-
arate 1,024-word and 32-word areas. The 64-byte and 32-word areas are typically used
for error management functions.
The contents of each 2,112-byte page can be programmed in 300µs, and an entire 132K-
byte/66K-word block can be erased in 2ms. On-chip control logic automates PROGRAM
and ERASE operations to maximize cycle endurance. ERASE/PROGRAM endurance is
specified at 100K cycles when using appropriate error correcting code (ECC) and error
management.
I/O [7:0]
I/O [15:0]
(3V I/O only)
R/B#
WE#
WP#
The PRE function is not supported on extended-temperature devices.
CE#
ALE
RE#
PRE
CLE
Control
Control
Logic
I/O
Command Register
Address Register
Status Register
7
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2005 Micron Technology, Inc. All rights reserved.
Column Decode
Cache Register
Data Register
V
CC
V
SS