MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 21

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

Power-On AUTO-READ
Figure 16:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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First Page Power-On AUTO-READ (3V devices only)
Notes: 1. Verified per device characterization; not 100 percent tested on all devices.
During power-on, with the PRE pin at V
page of the memory array to the data register without requiring a command or address-
input sequence. After V
initiates the power-on AUTO-READ function.
R/B# will stay LOW (
See Table 21 on page 45 for
HIGH, RE# can be toggled repeatedly to output the first page of data.
If connected, PRE must be set to 0V or V
device operations. PRE can be left unconnected if not used, in which case, PRE function-
ality is disabled.
The power-on AUTO-READ function is available only on 3V commercial-temperature
devices.
WE#
R/B#
ALE
I/Ox
CE#
PRE
RE#
CLE
Vcc
t
RPRE) while the first page of data is copied into the data register.
CC
≈ 2.5V 1
reaches approximately 2.5V, the internal voltage detector
t
RPRE values. Once the READ is complete and R/B# goes
21
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
t RPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC
CC
, 3V devices automatically transfer the first
at power-on, and must not be toggled during
1st
©2005 Micron Technology, Inc. All rights reserved.
2nd
Bus Operation
3rd
Undefined
.....
n th