MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 39

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

WRITE PROTECT Operation
Figure 32:
Figure 33:
Figure 34:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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ERASE Enable
ERASE Disable
PROGRAM Enable
It is possible to enable and disable PROGRAM and ERASE commands using the WP# pin.
The following figures illustrate the setup time (
PROGRAM or ERASE command is latched into the command register. After command
cycle 1 is latched, WP# must not be toggled until the command is complete and the
device is ready (status register bit 5 is “1”).
WE#
WP#
R/B#
WE#
WP#
R/B#
WE#
WP#
R/B#
I/Ox
I/Ox
I/Ox
t WW
t WW
t WW
60h
60h
80h
39
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
D0h
D0h
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WW) required from WP# toggling until a
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.