MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 38

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

RESET Operation
RESET FFh
Figure 31:
Table 12:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
Condition
WP# HIGH
WP# LOW
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WE#
R/B#
I/Ox
CE#
CLE
Status Register Contents After RESET Operation
RESET Operation
Status
Ready
Ready and write protected
Command
RESET
FF
The RESET command is used to put the memory device into a known condition and to
abort a command sequence in progress.
READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy
state. The contents of the memory location being programmed or the block being erased
are no longer valid. The data may be partially erased or programmed, and is invalid. The
command register is cleared and is ready for the next command. The data register and
cache register contents are invalid.
The status register contains the value E0h when WP# is HIGH; otherwise it is written
with a 60h value. R/B# goes low for
command register (see Figure 31 and Table 12).
t WB
Bit 7
1
0
t RST
Bit 6
1
1
38
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Bit 5
1
1
t
RST after the RESET command is written to the
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bit 4
0
0
Bit 3
0
0
Bit 2
0
0
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
Bit 1
0
0
Bit 0
0
0
Hex
E0h
60h