K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 10

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F5608X0D-XCB0
K9F5608R0D
Supply Voltage
Supply Voltage
Supply Voltage
K9F5608U0D
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Maximum DC voltage on input/output pins is V
Parameter
Parameter
K9F5608D0D
Symbol
V
V
V
CCQ
CC
SS
K9F5608X0D-XCB0
K9F5608X0D-XCB0
K9F5608X0D-XIB0
K9F5608X0D-XIB0
SS
1.65
1.65
Min
0
K9F5608R0D(1.8V)
CC,
+0.3V which, during transitions, may overshoot to V
Typ.
1.8
1.8
0
:
T
A
=0 to 70°C, K9F5608X0D-XIB0
Symbol
V
V
T
Max
1.95
1.95
T
IN/OUT
V
Ios
BIAS
CCQ
STG
0
CC
10
Min
2.4
2.4
K9F5608D0D(2.65V)
0
Typ.
2.65
2.65
0
:
T
A
Max
2.9
2.9
=-40 to 85°C)
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
0
-10 to +125
-40 to +125
-65 to +150
Rating
CC
5
+2.0V for periods <20ns.
Min
2.7
2.7
0
K9F5608U0D(3.3V)
FLASH MEMORY
Typ.
3.3
3.3
0
Max
3.6
3.6
0
Unit
Unit
mA
°C
°C
V
V
V
V