K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 28

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K9F5608D0D

Manufacturer Part Number
K9F5608D0D
Description
32M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation
K9F5608R0D
R/B
I/Ox
K9F5608U0D
RE
CLE
CE
WE
ALE
R/B
I/Ox
A
00h
01h
4
~ A
50h
7
Don’t care
Block
K9F5608D0D
Start Add.(3Cycle)
A
Start Add.(3Cycle)
0
~ A
7
& A
1st half array
9
~ A
(00h Command)
Data Field
24
t
R
2nd half array
t
R
Spare Field
Data Field
Data Output
Main array
1st
On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
CE must be held
low during tR
1st
2nd
Nth
28
(only for
Spare Field
t
R
1st half array
K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
(01h Command)
Data Field
Data Output
(528 Byte)
2nd half array
Data Output(Sequential)
2nd
Spare Field
Spare Field
FLASH MEMORY
t
R
1st
2nd
Nth
Data Output
)
(528 Byte)
Nth

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