K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 3

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

32M x 8 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
• Voltage Supply
• Organization
• Automatic Program and Erase
• Fast Write Cycle Time
GENERAL DESCRIPTION
Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command
input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
K9F5608R0D
K9F5608U0D
• Page Read Operation
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- 1.8V device(K9F5608R0D) : 1.65~1.95V
- 2.65V device(K9F5608D0D) : 2.4~2.9V
- 3.3V device(K9F5608U0D) : 2.7 ~ 3.6 V
-(32M + 1024K)bit x 8 bit
- (512 + 16)bit x 8bit
-(512 + 16)Byte
- (16K + 512)Byte
- (512 + 16)Byte
K9F5608D0D-P
K9F5608U0D-P
K9F5608U0D-F
K9F5608R0D-J
K9F5608D0D-J
K9F5608U0D-J
Part Number
K9F5608D0D
: 15µs(Max.)
1.65 ~ 1.95V
Vcc Range
2.4 ~ 2.9V
2.7 ~ 3.6V
3
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9F5608D(U)0D-PCB0/PIB0
- K9F5608X0D-JCB0/JIB0
- K9F5608U0D-FCB0/FIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0D-F(WSOPI ) is the same device as
K9F5608U0D-P(TSOP1) except package type.
Organization
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
FBGA
FBGA
FBGA