K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 11

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC AND OPERATING CHARACTERISTICS
NOTE : V
K9F5608R0D
Stand-by Current(TTL)
Stand-by Cur-
rent(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All
inputs
Output High Voltage
Level
Output Low Voltage
Level
Output Low Current(R/B) I
K9F5608U0D
Operat-
Current
ing
Parameter
IL
Sequential
Read
Program
Erase
can undershoot to -0.4V and V
K9F5608D0D
Symbol
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
OL
IL*
1
2
3
1
2
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F5608R0D :I
K9F5608D0D :I
K9F5608U0D :I
K9F5608R0D :I
K9F5608D0D :I
K9F5608U0D :I
K9F5608R0D :V
K9F5608D0D :V
K9F5608U0D :V
OUT
IN
OUT
IH
=0 to Vcc(max)
=0mA
can overshoot to V
=0 to Vcc(max)
IH
CC
, WP=0V/V
-0.2, WP=0V/V
Test Conditions
OH
OH
OH
OL
OL
OL
OL
OL
OL
IL
=100uA
=100µA
=2.1mA
=-100µA
=-100µA
=-400µA
-
-
CC
-
=0.1V
=0.1V
=0.4V
CC
CC
+0.4V for durations of 20 ns or less.
(Recommended operating conditions otherwise noted.)
11
V
Vcc
Min Typ Max Min Typ
-0.4
V
-0.4
-0.3
-0.1
CCQ
3
-
-
-
-
-
-
-
CC
-
Q
1.8V
10
8
8
8
4
-
-
-
-
-
-
-
-
V
+0.3
+0.3
V
±10
±10
0.4
0.1
20
20
20
50
CCQ
1
CC
-
-
V
V
-0.4
V
-0.4
-0.3
-0.4
CCQ
CCQ
K9F5608X0D
3
CC
-
-
-
-
-
-
-
-
2.65V
10
10
10
10
4
-
-
-
-
-
-
-
-
FLASH MEMORY
V
Max Min Typ Max
+0.3
+0.3
V
±10
±10
0.5
0.4
20
20
20
50
CCQ
1
CC
-
-
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
10
10
10
10
10
-
-
-
-
-
-
-
-
V
+0.3
+0.3
V
±10
±10
0.8
0.4
20
25
25
50
CCQ
1
CC
-
-
Unit
mA
mA
µA
V