K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 12

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
3.
AC TEST CONDITION
(K9F5608X0D-XCB0 :TA=0 to 70°C, K9F5608X0D-XIB0:TA=-40 to 85°C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F5608R0D:Output Load (Vcc
K9F5608D0D:Output Load (Vcc
K9F5608U0D:Output Load (Vcc
K9F5608U0D:Output Load (Vcc
K9F5608R0D
K9F5608U0D
K9F5608R0D : Vcc=1.65V~1.95V , K9F5608D0D : Vcc=2.4V~2.9V , K9F5608U0D : Vcc=2.7V~3.6V unless otherwise noted)
cycles.
Valid Block Number
Input/Output Capacitance
Input Capacitance
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
CLE
H
H
X
X
X
X
X
L
L
L
L
L
device
2. WP should be biased to CMOS high or CMOS low for standby.
ALE
Parameter
X
H
H
X
X
X
X
L
L
L
L
L
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
(1)
Item
IL
Parameter
or V
CE
K9F5608D0D
X
X
X
X
H
(
L
L
L
L
L
L
L
T
A
IH.
=25°C, V
WE
Q
Q
Q
Q
H
H
X
X
X
X
X
:1.8V +/-10%)
:2.65V +/-10%)
:3.0V +/-10%)
:3.3V +/-10%)
CC
=1.8V/2.65V/3.3V, f=1.0MHz)
Symbol
Symbol
N
C
RE
C
H
H
H
H
H
H
H
X
X
X
X
I/O
VB
IN
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
0V/V
WP
X
X
H
H
H
X
X
X
H
H
L
CC
Test Condition
K9F5608R0D
0V to Vcc
(2)
Vcc
V
V
5ns
Data Input
Data Output
During Read(Busy)
During Read(Busy) on the devices except
K9F5608D0D_Y,P
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
2013
IL
IN
Min
-
=0V
=0V
Q
/2
Read Mode
12
Write Mode
Q
Typ.
On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
Min
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
-
-
-
K9F5608D0D
0V to Vcc
Vcc
5ns
-
Q
/2
Mode
Q
FLASH MEMORY
2048
Max
Max
10
10
On K9F5608U0D_Y,P,V,F or
1 TTL GATE and CL=100pF
.
Do not erase or program
K9F5608U0D
0.4V to 2.4V
1.5V
5ns
Blocks
Unit
Unit
pF
pF