K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 14

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC CHARACTERISTICS FOR OPERATION
NOTE: 1. K9F5608R0D tREA = 35ns.
K9F5608R0D
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time
K9F5608U0D
K9F5608U0D-
P,F or
K9F5608D0D--
P only
2. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
4. To break the sequential read cycle, CE must be held high for longer time than tCEH.
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at
CE High Hold Time(at the last serial read)
K9F5608D0D
Parameter
(Read/Program/Erase)
Symbol
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
t
REH
CLR
REA
CEA
RHZ
CHZ
RST
t
(4)
t
WB
OH
AR
RR
RP
RC
IR
R
14
Symbol
t
t
t
CRY
CEH
Min
RB
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
Min
100
-
-
FLASH MEMORY
5/10/500
30/35
Max
100
50 +tr(R/B)
15
45
30
20
-
-
-
-
-
-
-
-
-
(1)
Max
100
(2)
-
(3)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Uni
ns
ns
ns