K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 35

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 16. The two step command sequence for
program/erase provides additional software protection.
Figure 16. AC Waveforms for Power Transition
K9F5608R0D
K9F5608U0D
WP
WE
V
CC
2.65V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9F5608D0D
10µs
High
IL
during power-up and power-down and recovery time of minimum 10µs is
35
FLASH MEMORY
2.65V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V