K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 19

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K9F5608D0D

Manufacturer Part Number
K9F5608D0D
Description
32M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
K9F5608R0D
K9F5608U0D
CLE
CE
WE
ALE
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
K9F5608D0D
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
CE must be held
low during tR
t
CH
t
R
Data Input
19
I/O
CE
RE
0
~
7
CE don’t-care
CE don’t-care
t
CEA
Data Output(sequential)
t
REA
FLASH MEMORY
Data Input
out
t
OH
10h

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