K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 22

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K9F5608D0D

Manufacturer Part Number
K9F5608D0D
Description
32M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
Status Read Cycle
Read1 Operation
K9F5608R0D
K9F5608U0D
CLE
CE
WE
RE
I/Ox
CLE
CE
WE
ALE
RE
R/B
I/Ox
t
Read
WC
CMD
K9F5608D0D
(Read One Page)
m = 528 , Read CMD = 00h or 01h
N Address
A0~A7
Column
Address
A9~A16
t
CLS
Page(Row)
Address
t
CS
A17~A24
t
WP
t
DS
70h
t
WB
Busy
t
t
RR
R
t
t
t
CH
CLH
DH
t
AR
On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
CE must be held
low during tR
22
Dout N
NOTES : 1) is only valid
t
WHR1
Dout N+1
t
CLR
t
RC
t
IR
Dout N+2
t
CEA
t
REA
On
Dout N+3
K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P
FLASH MEMORY
Status Output
t
t
t
RHZ
CHZ
t
OH
OH
1)
Dout m
1)
t
RHZ
t
OH
t
RB
t
t
CHZ
OH
t
CEH
t
CRY

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