K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 17

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

NAND Flash Technical Notes
K9F5608R0D
K9F5608U0D
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Erase Flow Chart
Block Replacement
*
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
{
{
K9F5608D0D
No
an error occurs.
Read Status Register
Write Block Address
Block A
Block B
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
Write D0h
I/O 6 = 1 ?
Write 60h
Start
Yes
Yes
(Continued)
2
1
Buffer memory of the controller.
No
17
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes