K9F5608D0D SAMSUNG [Samsung semiconductor], K9F5608D0D Datasheet - Page 13

• Manufacturer Part Number: K9F5608D0D
• Description: 32M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

PROGRAM/ERASE CHARACTERISTICS
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
K9F5608R0D
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
K9F5608U0D
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
K9F5608D0D
Parameter
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
ADL
WC
WH
CH
WP
DH
CS
DS
Spare Array
Main Array
Symbol
t
t
PROG
Nop
BERS
13
25
Min
100
10
10
10
20
10
50
15
0
0
0
(1)
Min
-
-
-
-
Typ
200
2
-
-
FLASH MEMORY
Max
-
-
-
-
-
-
-
-
-
-
-
-
Max
500
2
3
3
cycles
cycles
Unit
ms
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns