MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 19

• Manufacturer Part Number: MT46H16M32LFCX-5:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCX-5:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 5: AC/DC Electrical Characteristics and Operating Conditions (Continued)
Notes 1–5 apply to all parameters/conditions in this table; V
Table 6: 1.2V I/O AC/DC Electrical Characteristics and Operating Conditions
Notes 1–5 apply to all parameters/conditions in this table; V
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Parameter/Condition
Output leakage current
(DQ are disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
Parameter/Condition
Supply voltage
I/O supply voltage
Address and command inputs
Input voltage high
Input voltage low
Clock inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data inputs
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage current
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current
(DQ are disabled; 0V ≤ V
Operating temperature
Commercial
Industrial
IN
≤ V
Notes:
DD
OUT
OUT
≤ V
≤ V
1. All voltages referenced to V
2. All parameters assume proper device initialization.
DDQ
DDQ
OL
OH
)
)
= 0.1mA)
= –0.1mA)
Symbol
Symbol
V
V
V
V
V
V
V
V
V
V
ID(DC)
ID(AC)
IH(DC)
IH(AC)
V
V
V
IL(DC)
IL(AC)
I
V
I
T
T
T
T
DDQ
OZ
OZ
OH
I
DD
OL
IH
IN
A
A
IX
A
A
IL
I
DD
DD
19
/V
/V
SS
DDQ
DDQ
.
512Mb: x16, x32 Mobile LPDDR SDRAM
0.9 × V
0.4 × V
0.6 × V
0.4 × V
0.8 × V
0.9 × V
0.9 × V
= 1.70–1.95V
= 1.70–1.95V
Min
Min
1.70
1.14
–0.2
–0.2
–0.2
–0.2
–40
–40
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–5
–1
–5
0
0
–
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
V
0.1 × V
V
V
V
0.6 × V
V
0.2 × V
V
0.1 × V
0.1 × V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Max
Max
Electrical Specifications
1.95
1.30
+70
+85
+70
+85
5
–
1
5
+ 0.2
+ 0.2
+ 0.4
+ 0.4
+ 0.2
+ 0.2
DDQ
DDQ
DDQ
DDQ
DDQ
© 2004 Micron Technology, Inc. All rights reserved.
Unit
Unit
μA
μA
μA
˚C
˚C
˚C
˚C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
8, 9, 13
8, 9, 13
8, 9, 13
8, 9, 13
Notes
Notes
10, 11
10, 11
10, 12
6, 7
6, 7
8, 9
8, 9
10