MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 98

• Manufacturer Part Number: MT46H16M32LFCX-5:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCX-5:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Update – 03/08
Update – 12/07
Update – 07/07
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Although considered final, these specifications are subject to change, as further product development and data characterization some-
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
• Removed 70°C and 15°C values from Table 9: “Idd6 Specifications and Conditions” as
• Changed the following specification: tRC -75 to 67.5ns, and removed note 21 from Ta-
• Added BL 16 to the “Functional Description” and Figure 19: “Extended Mode Regis-
• Added BL 16 content to Table 19, “Burst Definition Table”
• Added three-quarter drive strength and deleted one-eighth drive strength, and upda-
• Removed E7 column and updated valid column heading to E7–E0; expanded driver
• Updated note 2 in the following:
• Updated note 3 in the following:
• Removed final note in each of the following:
• Extended tWR to coincide with T5 transition in Figure 43: “WRITE-to-PRECHARGE –
• Updated figure references for “Concurrent Auto Precharge”
• Updated Figure 19, “Extended Mode Register,” to include mid-strength driver infor-
• Corrected headings for density in Figure 21: “Status Register Definition”
• Initial Release
www.micron.com/productsupport Customer Comment Line: 800-932-4992
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: [phone]
Micron and the Micron logo are trademarks of Micron Technology, Inc.
they are redundant and are shown in Figure 9: “Typical Idd6 Curves”
ble 10: “Electrical Characteristics and Recommended AC Operating Conditions"
ter” and throughout document as appropriate: Added BL 16.
ted to include 37 ohm (deleted 100 ohm) in "Output Drive Strength”
strength section to include three-quarter drive strength in Figure 19: “Extended Mode
Register”
– Figure 23: “Consecutive READ Bursts”
– Figure 24: “Nonconsecutive READ Bursts”
– Figure 25: “Random READ Accesses”
– Figure 26: “Terminating a READ Burst”
– Figure 28: “READ-to-PRECHARGE”
– Figure 27: “READ-to-WRITE”
– Figure 37: “Random WRITE Cycles”
– Figure 39: “WRITE-to-READ – Interrupting”
– Figure 40: “WRITE-to-READ – Odd Number of Data, Interrupting”
– Figure 42: “WRITE-to-PRECHARGE – Interrupting”
Odd Number of Data, Interrupting”
mation
All other trademarks are the property of their respective owners.
times occur.
98
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Revision History