MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 80

IC DDR SDRAM 512MBIT 90VFBGA

MT46H16M32LFCX-5:B

Manufacturer Part Number
MT46H16M32LFCX-5:B
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H16M32LFCX-5:B

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
125mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M32LFCX-5:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H16M32LFCX-5:B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT46H16M32LFCX-5:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 42: WRITE-to-PRECHARGE – Uninterrupting
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DQ
DQ
DQ
DM
DM
DM
CK
1
6
6
6
WRITE
Bank a,
Col b
T0
Notes:
2,4
t
DQSS
t
DQSS
t
DQSS
1. An uninterrupted burst 4 of is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4. The PRECHARGE and WRITE commands are to the same device. However, the PRE-
5.
6. D
D
IN
CHARGE and WRITE commands can be to different devices; in this case,
required and the PRECHARGE command can be applied earlier.
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
IN
b = data-in for column b.
D
D
IN
IN
T1n
D
IN
D
D
IN
IN
NOP
D
T2
IN
D
D
IN
IN
T2n
D
IN
80
D
IN
NOP
T3
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
NOP
WR
T4
5
Don’t Care
(a or all)
PRE
T5
Bank
© 2004 Micron Technology, Inc. All rights reserved.
3,4
WRITE Operation
Transitioning Data
t
WR is not
T6
NOP

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