MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 96

IC DDR SDRAM 512MBIT 90VFBGA

MT46H16M32LFCX-5:B

Manufacturer Part Number
MT46H16M32LFCX-5:B
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H16M32LFCX-5:B

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
125mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M32LFCX-5:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H16M32LFCX-5:B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT46H16M32LFCX-5:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Revision History
Rev. I, Production – 12/09
Rev. H, Production – 03/09
Rev. G, Production – 02/09
Rev. F, Production – 10/08
Rev. E, Production – 8/08
Rev. D, Production – 05/08
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
• Changed all
• Added a note to the
• Added a second paragraph to SELF REFRESH (page 41).
• Added
• Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13).
• Updated step 1 and added Figure 17 (page 50) in Initialization (page 48).
• Updated Status Read Register (page 57).
• Deleted 80Ω from Output Drive Strength (page 56).
• Added 1.2V I/O Option to the following:
• Added 9mm x 13mm 90-ball package to the following:
• Updated Idd Values
• Added “L” low-power option
• Table 10: “Idd6 Specifications and Conditions,” on page 21: Removed 70°C and 15°C
• Table 11: “Electrical Characteristics and Recommended AC Operating Conditions:”
– “Features" and "Options"
– Figure 1: “512Mb Mobile DDR Part Numbering”
– Table 6: “1.2V I/O AC/DC Electrical Characteristics and Operating Conditions”
– Table 15: “1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)”
– Figure 19: “Extended Mode Register”
– “Options”
– Figure 1: “512Mb Mobile DDR Part Numbering”
– Figure 8: “90-Ball VFBGA Package (9mm x 13mm),” on page 14
– Table 8: “Idd Specifications and Conditions (x16),” on page 19
– Table 9: “Idd Specifications and Conditions (x32),” on page 20
– Figure 1: “512Mb Mobile DDR Part Numbering,” on page 5
– Table 10: “Idd6 Specifications and Conditions,” on page 21
values as they are redundant and shown in Figure 9, "Typical Idd6 Curves"
– Changed the following specification: tRC -75 to 67.5ns
– Removed note 21
t
CKE line to Figure 50 (page 91).
t
RFC values from 97.5ns to 72ns in Table 11 (page 26).
t
CKE symbol in Table 11 (page 26).
96
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Revision History

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