MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 27

• Manufacturer Part Number: MT46H16M32LFCX-5:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCX-5:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Parameter
Half-clock period
Data-out High-
Z window from
CK/CK#
Data-out Low-Z window from
CK/CK#
Address and
control input
hold time
Address and
control input
hold time
Address and
control input
setup time
Address and
control input
setup time
Address and control input pulse
width
LOAD MODE REGISTER
command cycle time
DQ–DQS hold, DQS to first DQ
to go nonvalid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE
command
ACTIVE to ACTIVE/ACTIVE to AU-
TO REFRESH command period
Active-to-read or write delay
Refresh period
Average periodic refresh
interval
AUTO REFRESH command
period
PRECHARGE command period
DQS read
preamble
DQS read
preamble
slow slew rate
slow slew rate
fast slew rate
fast slew rate
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
MRD
t
RPRE
RPRE
t
t
t
t
QHS
RCD
REFI
t
t
IPW
RAS
t
t
t
t
REF
RFC
t
QH
HP
HZ
IH
IH
IS
IS
RC
RP
LZ
F
S
F
S
t
t
Min
t
QHS
HP -
t
1.0
0.9
1.1
0.9
1.1
2.3
0.9
0.5
CH,
40
55
15
72
15
CL
–
–
2
–
–
–
Electrical Specifications – AC Operating Conditions
DD
/V
-5
70,000
DDQ
Max
5.0
6.5
0.5
7.8
1.1
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
= 1.70–1.95V
27
t
t
Min
t
59.4
16.2
16.2
QHS
HP -
t
1.0
1.0
1.2
1.0
1.2
2.4
0.9
0.5
CH,
42
72
CL
2
–
–
–
–
–
512Mb: x16, x32 Mobile LPDDR SDRAM
-54
70,000
Max
5.0
6.5
0.5
7.8
1.1
1.1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
64
–
–
–
–
–
–
–
–
–
–
–
–
–
t
t
Min
t
QHS
HP -
t
CH,
1.0
1.1
1.3
1.1
1.3
2.4
0.9
0.5
42
60
18
72
18
CL
2
–
–
–
–
–
-6
70,000
Max
0.65
5.0
6.5
7.8
1.1
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
t
t
Min
67.5
22.5
22.5
t
QHS
HP -
CH,
t
1.0
1.3
1.5
1.3
1.5
2.6
0.9
0.5
45
72
CL
© 2004 Micron Technology, Inc. All rights reserved.
2
–
–
–
–
–
-75
70,000
Max
0.75
6.0
6.5
7.8
1.1
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
ms
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
ns
ns
μs
ns
ns
CK
CK
19, 20
15, 21
15, 21
13, 17
18
19
16
23