MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 73

• Manufacturer Part Number: MT46H16M32LFCX-5:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCX-5:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 34: Write – DM Operation
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
1
t
IH
IH
Notes:
t
t
ACTIVE
IS
Bank x
IS
Row
Row
T1
t
t
IH
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
t
CK
these times.
t
t
IN
RCD
RAS
n = data-in from column n.
NOP
T2
1
t
CH
t
CL
t
WPRES
t
WRITE
IS
Bank x
Note 4
Col n
T3
t
IH
t
2
DQSS (NOM)
t
73
DS
NOP
T4
D
512Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
1
t
DH
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
D
T5
IN
t
DQSH
1
T5n
t
WPST
NOP
T6
1
Don’t Care
© 2004 Micron Technology, Inc. All rights reserved.
WRITE Operation
t
NOP
WR
T7
1
1
Transitioning Data
One bank
All banks
Bank x
PRE
T8
3
5
t
RP