MT46H16M32LFCX-5:B Micron Technology Inc, MT46H16M32LFCX-5:B Datasheet - Page 26

• Manufacturer Part Number: MT46H16M32LFCX-5:B
• Description: IC DDR SDRAM 512MBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCX-5:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – AC Operating Conditions
Table 11: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Parameter
Access window
of DQ from
CK/CK#
Clock cycle time
CK high-level width
CK low-level width
CKE minimum pulse width
(high and low)
Auto precharge write recovery
+ precharge time
DQ and DM in-
put hold time
relative to DQS
DQ and DM in-
put hold time
relative to DQS
DQ and DM in-
put setup time
relative to DQ
DQ and DM in-
put setup time
relative to DQS
DQ and DM input pulse width
(for each input)
Access window
of DQS from
CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last DQ
valid, per group, per access
WRITE command to first DQS
latching transition
DQS falling edge from CK
rising – hold time
DQS falling edge to CK rising –
setup time
Data valid output window
slow slew rate
slow slew rate
fast slew rate
fast slew rate
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
DQSCK
t
t
t
t
t
DQSQ
DQSH
DVW
t
DIPW
t
t
DQSL
DQSS
t
t
t
t
t
t
t
DAL
DSH
t
CKE
t
DH
DH
DSS
DS
DS
AC
CK
CH
CL
f
s
f
s
Min
0.45
0.45
0.48
0.58
0.48
0.58
0.75
t
2.0
2.0
1.4
2.0
2.0
0.4
0.4
0.2
0.2
QH -
12
5
1
–
–
Electrical Specifications – AC Operating Conditions
DD
/V
-5
t
DQSQ
DDQ
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.4
–
–
–
–
–
–
–
–
–
–
–
= 1.70–1.95V
26
Min
0.45
0.45
0.54
0.64
0.54
0.64
0.75
t
2.0
2.0
5.4
1.4
2.0
2.0
0.4
0.4
0.2
0.2
QH -
12
1
–
–
512Mb: x16, x32 Mobile LPDDR SDRAM
-54
t
DQSQ
Max
0.55
0.55
0.45
1.25
5.0
6.5
5.0
6.5
0.6
0.6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
–
–
Min
0.45
0.45
0.75
t
2.0
2.0
0.6
0.7
0.6
0.7
1.4
2.0
2.0
0.4
0.4
0.2
0.2
QH -
12
6
1
–
–
-6
t
DQSQ
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.5
–
–
–
–
–
–
–
–
–
–
–
Min
0.45
0.45
0.75
t
2.0
2.0
7.5
0.8
0.9
0.8
0.9
1.4
2.0
2.0
0.4
0.4
0.2
0.2
QH -
12
© 2004 Micron Technology, Inc. All rights reserved.
1
–
–
-75
t
DQSQ
Max
0.55
0.55
1.25
6.0
6.5
6.0
6.5
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
t
t
t
t
t
ns
ns
CK
CK
CK
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
13, 14,
13, 14,
13, 17
10
11
12
15
15
16
17