MT29F8G08FACWP:C TR Micron Technology Inc, MT29F8G08FACWP:C TR Datasheet - Page 39

• Manufacturer Part Number: MT29F8G08FACWP:C TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08FACWP:C TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Electrical Characteristics
Table 13:
Table 14:
V
Figure 33:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. D 12/06 EN
Parameter/Condition
Parameter/Condition
Voltage input
V
Storage temperature
Short circuit output current, I/Os
Operating temperature
V
Ground supply voltage
CC
CC
CC
supply voltage
supply voltage
Power Cycling
Absolute Maximum Ratings by Device
Voltage on any pin relative to V
Recommended Operating Conditions
AC Waveforms During Power Transitions
Stresses greater than those listed under “Absolute Maximum Ratings” (see Table 13)
may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not guaranteed. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
device), or 2.0V (3V device), PROGRAM and ERASE functions are disabled. WP# provides
additional hardware protection. WP# should be kept at V
V
should be allowed for the NAND Flash to initialize before any commands are executed
(see Figure 33).
WP#
WE#
R/B#
Vcc
CC
reaches approximately 1.5V (1.8V device) or 2.5V (3V device), a minimum of 10µs
1.8V device: ≈ 1.5V
3V device: ≈ 2.5V
CC
is internally monitored. When V
Commercial
Extended
MT29FxGxxxAC
MT29FxGxxxBC
MT29FxGxxxAC
MT29FxGxxxBC
MT29FxGxxxAC
MT29FxGxxxBC
SS
10µs
HIGH
39
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
Symbol
V
V
T
CC
SS
A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
T
V
V
STG
CC
IN
CC
Min
1.70
–40
goes below approximately 1.1V (1.8V
2.7
0
0
Don’t Care
Min
–0.6
–0.6
–0.6
–0.6
–65
Electrical Characteristics
–
IL
Typ
3.3
1.8
during power cycling. When
–
–
0
©2005 Micron Technology, Inc. All rights reserved.
3V device: ≈ 2.5V
1.8V device: ≈ 1.5V
Max
+150
+4.6
+2.4
+4.6
+2.4
5
Undefined
Max
1.95
+85
3.6
70
0
Unit
Unit
mA
°C
o
o
V
V
V
V
V
V
V
C
C