R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 303

• Manufacturer Part Number: R4F24268NVFQV
• Description: MCU 256K FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
In some synchronous DRAMs provided with a self-refresh mode, the interval between clearing
self-refreshing and the next command is specified. A setting can be made in bits TPCS2 to TPCS0
in REFCR to make the precharge time after self-refreshing from 1 to 7 states longer than the
normal precharge time. In this case, too, normal precharging is performed according to the setting
of bits TPC1 and TPC0 in DRACCR, and therefore a setting should be made to give the optimum
post-self-refresh precharge time, including this time. Figure 6.70 shows an example of the timing
when the precharge time after self-refreshing is extended by 2 states.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Precharge-sel
Address bus
SDRAMφ
CAS
RAS
CKE
WE
(TPC1 = 1, TPC0 = 0, RCW1 = 0, RCW0 = 0, RLW1 = 0, RLW0 = 0)
φ
PALL
T
Rp
SELF
Figure 6.69 Self-Refresh Timing
T
Rr
Software standby
NOP
Section 6 Bus Controller (BSC)
T
Rc2
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