R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 327

MCU 256K FLASH 48K 144-LQFP

R4F24268NVFQV

Manufacturer Part Number
R4F24268NVFQV
Description
MCU 256K FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet

Specifications of R4F24268NVFQV

Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

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Manufacturer
Quantity
Price
Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
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Part Number:
R4F24268NVFQV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
H8S/2426, H8S/2426R, H8S/2424 Group
(a)
While the DRMI bit is cleared to 0 in DRACCR, idle cycle insertion after continuous synchronous
DRAM space read access is disabled. Idle cycle insertion after continuous synchronous DRAM
space read access can be enabled by setting the DRMI bit to 1. The conditions and number of
states of the idle cycle to be inserted are in accordance with the settings of bits ICIS1, ICIS0, and
IDLC in RCR. Figure 6.91 shows an example of idle cycle operation when the DRMI bit is set to
1. When the DRMI bit is cleared to 0, an idle cycle is not inserted after continuous synchronous
DRAM space read access even if bits ICIS1 and ICIS0 are set to 1.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Figure 6.91 Example of Idle Cycle Operation after Continuous Synchronous DRAM Space
Precharge-sel
DQMU, DQML
Address bus
Normal space access after a continuous synchronous DRAM space read access
Data bus
CKE
CAS
RAS
WE
RD
Read Access (Read between Different Area) (IDLC = 0, CAS Latency 2)
φ
PALL ACTV READ
Column
address
T
p
Continuous synchronous
DRAM space read
address
address
Row
Row
T
r
T
Column address 1
c1
T
cl
T
c2
Idle cycle
High
T
i
External space read
External address
External address
T
1
NOP
T
2
T
3
Continuous synchronous
DRAM space read
Section 6 Bus Controller (BSC)
T
i
Column address 2
T
c1
READ
T
Page 297 of 1372
Cl
NOP
T
c2

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