R4F24268NVFQV Renesas Electronics America, R4F24268NVFQV Datasheet - Page 318

• Manufacturer Part Number: R4F24268NVFQV
• Description: MCU 256K FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
(5)
In a DRAM space access following a normal space access, the settings of bits ICIS2, ICIS1,
ICIS0, and IDLC in BCR are valid. However, in the case of consecutive reads in different areas,
for example, if the second read is a full access to DRAM space, only a T
T
Note: The DRAM interface is not supported by the 5-V version.
In burst access in RAS down mode, the settings of bits ICIS2, ICIS1, ICIS0, and IDLC are valid
and an idle cycle is inserted. The timing in this case is illustrated in figures 6.82 and 6.83.
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i
cycle is not. The timing in this case is shown in figure 6.81.
Idle Cycle in Case of DRAM Space Access after Normal Space Access
Figure 6.81 Example of DRAM Full Access after External Read
Address bus
Data bus
RD
φ
T
1
External read
T
2
(CAST = 0)
T
3
T
p
DRAM space read
T
r
T
H8S/2426, H8S/2426R, H8S/2424 Group
c1
T
p
c2
cycle is inserted, and a
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010