HD64F36077GHV Renesas Electronics America, HD64F36077GHV Datasheet - Page 133
HD64F36077GHV
Manufacturer Part Number
HD64F36077GHV
Description
16BIT MCU FLASH 56K, SMD, LQFP64
Manufacturer
Renesas Electronics America
Datasheet
1.HD64F36077GHV.pdf
(524 pages)
Specifications of HD64F36077GHV
No. Of I/o's
47
Ram Memory Size
4KB
Cpu Speed
20MHz
No. Of Timers
4
Digital Ic Case Style
LQFP
Supply Voltage Range
4.5V
Core Size
16bit
Program Memory Size
56KB
Oscillator Type
External Only
Controller Family/series
H8/300H
Peripherals
ADC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F36077GHV
Manufacturer:
RENESAS
Quantity:
340
Part Number:
HD64F36077GHV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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The features of the 56- or 32-kbyte flash memory built into this LSI are summarized below.
• Programming/erase methods
• Reprogramming capability
• On-board programming
• Programmer mode
• Automatic bit rate adjustment
• Programming/erasing protection
• Power-down mode
7.1
Figure 7.1 shows the block configuration of flash memory. The thick lines indicate erasing units,
the narrow lines indicate programming units, and the values are addresses. The 56-kbyte flash
memory is divided into 1 kbyte × 4 blocks, 28 kbytes × 1 block, 16 kbytes × 1 block, and 8 kbytes
× 1 block, while the 32-kbyte one is into 1 kbyte × 4 blocks and 28 kbytes × 1 block. Erasing is
performed in these units. Programming is performed in 128-byte units starting from an address
with lower eight bits H'00 or H'80.
ROM3560A_000120030300
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
The flash memory can be reprogrammed up to 1,000 times.
On-board programming/erasing can be done in boot mode, in which the boot program built
Flash memory can be programmed/erased in programmer mode using a PROM
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
Sets software protection against flash memory programming/erasing.
Operation of the power supply circuit can be partly halted in subactive mode. As a result,
units. The 56-kbyte flash memory for H8/36077F is configured as: 1 kbyte × 4 blocks, 28
kbytes × 1 block, 16 kbytes × 1 block, and 8 kbytes × 1 block, while the 32-kbyte one for
H8/36074F is as: 1 kbyte × 4 blocks and 28 kbytes × 1 block. To erase the entire flash
memory, each block must be erased in turn.
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
programmer, as well as in on-board programming mode.
the transfer bit rate of the host.
flash memory can be read with low power consumption.
Block Configuration
Section 7 ROM
Rev. 1.00 Sep. 16, 2005 Page 103 of 490
REJ09B0216-0100
Section 7 ROM
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