HD64F36077GHV Renesas Electronics America, HD64F36077GHV Datasheet - Page 148
![16BIT MCU FLASH 56K, SMD, LQFP64](/photos/19/6/190684/ge64qfp05-40_sml.jpg)
HD64F36077GHV
Manufacturer Part Number
HD64F36077GHV
Description
16BIT MCU FLASH 56K, SMD, LQFP64
Manufacturer
Renesas Electronics America
Datasheet
1.HD64F36077GHV.pdf
(524 pages)
Specifications of HD64F36077GHV
No. Of I/o's
47
Ram Memory Size
4KB
Cpu Speed
20MHz
No. Of Timers
4
Digital Ic Case Style
LQFP
Supply Voltage Range
4.5V
Core Size
16bit
Program Memory Size
56KB
Oscillator Type
External Only
Controller Family/series
H8/300H
Peripherals
ADC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F36077GHV
Manufacturer:
RENESAS
Quantity:
340
Part Number:
HD64F36077GHV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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Section 7 ROM
7.5
There are three kinds of flash memory program/erase protection; hardware protection, software
protection, and error protection.
7.5.1
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted because of a transition to reset, subactive mode, subsleep mode, or standby
mode. Flash memory control register 1 (FLMCR1), flash memory control register 2 (FLMCR2),
and erase block register 1 (EBR1) are initialized. In a reset via the RES pin, the reset state is not
entered unless the RES pin is held low until oscillation stabilizes after powering on. In the case of
a reset during operation, hold the RES pin low for the RES pulse width specified in the AC
Characteristics section.
7.5.2
Software protection can be implemented against programming/erasing of all flash memory blocks
by clearing the SWE bit in FLMCR1. When software protection is in effect, setting the P or E bit
in FLMCR1 does not cause a transition to program mode or erase mode. By setting the erase
block register 1 (EBR1), erase protection can be set for individual blocks. When EBR1 is set to
H'00, erase protection is set for all blocks.
7.5.3
In error protection, an error is detected when CPU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is forcibly aborted. Aborting the program/erase
operation prevents damage to the flash memory due to overprogramming or overerasing.
When the following errors are detected during programming/erasing of flash memory, the FLER
bit in FLMCR2 is set to 1, and the error protection state is entered.
• When the flash memory of the relevant address area is read during programming/erasing
• Immediately after exception handling excluding a reset during programming/erasing
• When a SLEEP instruction is executed during programming/erasing
Rev. 1.00 Sep. 16, 2005 Page 118 of 490
REJ09B0216-0100
(including vector read and instruction fetch)
Program/Erase Protection
Hardware Protection
Software Protection
Error Protection
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