mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 19

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 9:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 EN
Parameter/Condition
Self refresh:
CKE = LOW;
inputs are stable; Data bus inputs are stable
t
CK =
I
Notes: 1–5, 7, and 12; apply to all the parameters/conditions in this table; V
DD
6 Specifications and Conditions
t
Notes:
CK (MIN); Address and control
10. CKE must be active (HIGH) during the entire time a REFRESH command is executed. From
11. This limit is a nominal value and does not result in a fail. CKE is HIGH during REFRESH com-
12. Values for I
13. Typical values at 25°C, not a maximum value.
1. All voltages referenced to V
2. Tests for I
3. Timing and I
4. I
5. I
6. MIN (
7. Measurement is taken 500ms after entering into this operating mode to provide settling
8. V
9. I
related specifications and device operation are guaranteed for the full voltage range speci-
fied.
input timing is still referenced to V
timing reference voltage level is V
imum cycle time with the outputs open.
at the defined cycle rate.
mum absolute value for the respective parameter.
largest multiple of
time for the tester.
the time the AUTO REFRESH command is registered, CKE must be active at each rising clock
edge until
mand period (
are estimated.
DD
DD
DD
DD
2N specifies DQ, DQS, and DM to be driven to a valid HIGH or LOW logic level.
is dependent on output loading and cycle rates. Specified values are obtained with min-
specifications are tested after the device is properly initialized and values are averaged
must not vary more than 4 percent if CKE is not active while any bank is active.
t
RC or
DD
t
DD
RFC later.
t
DD
characteristics may be conducted at nominal supply voltage levels, but the
RFC) for I
6 85°C are guaranteed for the entire temperature range. All other I
t
RFC [MIN]) else CKE is LOW (for example, during standby).
tests may use a V
t
CK that meets the maximum absolute value for
Full array, 85°C
Full array, 45°C
1/2 array, 85°C
1/2 array, 45°C
1/4 array, 85°C
1/4 array, 45°C
1/8 array, 85°C
1/8 array, 45°C
1/16 array, 85°C
1/16 array, 45°C
DD
measurements is the smallest multiple of
SS
19
.
IL
-to-V
DD
DD
Q/2.
Q/2 (or to the crossing point for CK/CK#). The output
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
swing of up to 1.5V in the test environment, but
Symbol
1Gb: x16, x32 Mobile DDR SDRAM
I
DD
6
t
RAS (MAX) for I
Low Power
1,000
DD
500
750
440
600
380
550
350
500
330
Electrical Specifications
/V
DD
©2007 Micron Technology, Inc. All rights reserved
Q = 1.70–1.95V
t
DD
CK that meets the mini-
t
RAS.
Standard
measurements is the
1,200
750
900
730
750
680
750
620
700
540
DD
6 values
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA