mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 26
mt46h32m32lfcm-6
Manufacturer Part Number
mt46h32m32lfcm-6
Description
1gb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M32LFCM-6.pdf
(87 pages)
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Table 12:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Target Output Drive Characteristics (Three-Quarter Strength)
Notes 1–3 apply to all values. Characteristics are specified under best and worst process variations/conditions.
Notes:
1. Table values based on nominal impedance of 37Ω (three-quarter drive strength) at V
2. The full variation in drive current, from minimum to maximum—due to process, voltage,
3. Contact factory for availability of three-quarter drive strength.
and temperature—will lie within the outer bounding lines of the I-V curves.
11.76
13.72
15.68
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
Min
0.00
1.96
3.92
5.88
7.84
9.80
Pull-Down Current (mA)
–
–
12.97
18.76
22.96
25.94
28.00
29.75
31.20
32.55
33.24
33.95
34.58
35.04
35.95
36.86
37.77
38.68
39.59
40.50
41.41
42.32
43.23
Max
0.00
26
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x16, x32 Mobile DDR SDRAM
-11.76
-13.72
-15.68
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-16.66
-1.96
-3.92
-5.88
-7.84
-9.80
Min
0.00
–
–
Pull-Up Current (mA)
Electrical Specifications
©2007 Micron Technology, Inc. All rights reserved
-12.97
-18.76
-22.96
-25.94
-28.00
-29.75
-31.20
-32.55
-33.24
-33.95
-34.58
-35.04
-35.95
-36.86
-37.77
-38.68
-39.59
-40.50
-41.41
-42.32
-43.23
Max
0.00
DD
Q/2.