mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 42

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mt46h32m32lfcm-6

Manufacturer Part Number
mt46h32m32lfcm-6
Description
1gb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 15:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. G 07/08 EN
Command
BA0, BA1
Address
V
DD
DQS
V
CK#
CKE
A10
DM
DQ
CK
DD
Q
1
Initialize and Load Mode Registers
Notes:
HIGH LEVEL
LVCMOS
Power-up: V
NOP 2
T = 200μs
1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH
2. NOP or DESELECT commands are required for at least 200µs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
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DD
command; ACT = ACTIVE command
and CK stable
t IS
NOP
T0
High-Z
High-Z
t IH
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t
CK
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CL
ALL BANKS
t
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PRE
T1
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RP
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AR
Ta0
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4
Tb0
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x16, x32 Mobile DDR SDRAM
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Load standard
mode register
4
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Op-code
Op-code
BA0 = L,
IS
IS
IS
BA1 = L
Tc0
LMR
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IH
IH
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Load extended
mode register
4
Op-code
Op-code
BA0 = L,
BA1 = H
LMR
Td0
©2007 Micron Technology, Inc. All rights reserved
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MRD
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4
Te0
ACT 3
Row
Row
Bank
Operations
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Don’t Care
NOP 3
Tf0

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