mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 25

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 11:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Target Output Drive Characteristics (Full Strength)
Notes 1–2 apply to all values. Characteristics are specified under best and worst process variations/conditions
Notes:
1. Table values based on nominal impedance of 25Ω (full-drive) at V
2. The full variation in drive current, from minimum to maximum—due to process, voltage,
and temperature—will lie within the outer bounding lines of the I-V curves.
11.20
14.00
16.80
19.60
22.40
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
23.80
Min
0.00
2.80
5.60
8.40
Pull-Down Current (mA)
–
–
18.53
26.80
32.80
37.05
40.00
42.50
44.57
46.50
47.48
48.50
49.40
50.05
51.35
52.65
53.95
55.25
56.55
57.85
59.15
60.45
61.75
Max
0.00
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x16, x32 Mobile DDR SDRAM
–11.20
–14.00
–16.80
–19.60
–22.40
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–23.80
–2.80
–5.60
–8.40
Min
0.00
–
–
Pull-Up Current (mA)
Electrical Specifications
©2007 Micron Technology, Inc. All rights reserved
DD Q
/2.
–18.53
–26.80
–32.80
–37.05
–40.00
–42.50
–44.57
–46.50
–47.48
–48.50
–49.40
–50.05
–51.35
–52.65
–53.95
–55.25
–56.55
–57.85
–59.15
–60.45
–61.75
Max
0.00