mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 85

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Revision History: Device
Rev. G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6/08
Rev.F. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .04/08
Rev. E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/08
Rev. D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2/08
Rev. C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9/07
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_rev_hist__4.fm - Rev. G 07/08 EN
• Table 10, Electrical Characteristics and Recommended AC Operating Conditions
• Updated “Commands, Operations, and Timing Diagrams” sections to 5.08 update.
• Updated IDD specifications
• Added “L” low-power option
• “Features” on page 1: Added burst length of 16 and note reference.
• Table 6, “Capacitance (x16, x32),” on page 16: Updated values.
• Table 7, “Idd Specifications and Conditions (x16),” on page 17; Table 8, “Idd Specifica-
• Table 12, “Target Output Drive Characteristics (Three-Quarter Strength),” on page 26:
• Deleted reference to Endur-IC on page 1.
• Changed the data sheet to “Production” status
• Updated Figure 6: “60-Ball VFBGA Package,” on page 12 and Figure 7: “90-Ball VFBGA
• Table 7, “Idd Specifications and Conditions (x16),” on page 17: Changed the following
• Table 8, “Idd Specifications and Conditions (x32),” on page 18: Changed the following
• Table 9, “Idd6 Specifications and Conditions,” on page 19: Replaced “TBDs” with
– Tightened
– Table 7, “Idd Specifications and Conditions (x16),” on page 17 and Table 8, “Idd
– Table 9, “Idd6 Specifications and Conditions,” on page 19: Updated 85°C standard
– Figure 1: “1Gb Mobile DDR Part Numbering,” on page 5: Updated to include low-
– Table 9, “Idd6 Specifications and Conditions,” on page 19: Updated to include low-
– Table 9, “Idd6 Specifications and Conditions,” on page 19: Removed 70’C and 15’C
tions and Conditions (x32),” on page 18; Table 9, “Idd6 Specifications and Condi-
tions,” on page 19; and Table 10, “Electrical Characteristics and Recommended AC
Operating Conditions,” on page 21: Added -5 and -54 speed grades.
Added table.
Package,” on page 13
specifications: I
-6 to 12mA, -75 to 10mA; I
12mA; I
140mA, -75 to 140mA
specifications: I
I
-75 to 12mA; I
140mA, -75 to 140mA
values.
DD
Specifications and Conditions (x32),” on page 18: Updated IDD2N and IDD2NS
specifications for -75 and -6 speed grade options.
specifications for full, half, and quarter-array PASR operation.
power option.
power option values.
values as they are redundant and provided in Figure 8: “Typical Self Refresh Current
vs. Temperature,” on page 20.
2NS -6 to 12mA, -75 to 10mA; I
DD
4R -6 to 115mA, -75 to 105mA; I
t
DD
RFC to 110ns from 125ns.
DD
DD
4R -75 to 120mA; I
0 -6 to 70mA, -75 to 60mA; I
0 -6 to 100mA, -75 to 70mA; I
DD
85
3N -6 to 18mA, -75 to 16mA; I
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3N -6 to 18mA, -75 to 16mA; I
4W -6 to 140mA, -75 to 120mA; I
1Gb: x16, x32 Mobile DDR SDRAM
DD
4W -6 to 115mA, -75 to 105mA; I
DD
DD
2N -6 to 16mA, -75 to 14mA; I
2N -6 to 16mA, -75 to 14mA;
Revision History: Device
DD
©2007 Micron Technology, Inc. All rights reserved
3NS -6 to 14mA, -75 to
DD
3NS -6 to 14mA,
DD
5 -6 to
DD
DD
5 -6 to
2NS